Specification	SIZF918BDT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	25 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	29 nC
Input Capacitance (Ciss) (Max)	1290 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	6 mm
Package Name	8-PowerPair®
Package Width	5 mm
Power - Max (Ta)	4 W, 3.4 W
Power - Max (Tc)	26.6 W, 60 W
Rds On (Max)	1.4 Ohm, 3.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.2 V

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