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FCPF9N60NTYDTU

FCPF9N60NTYDTU

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS<SUP>®</SUP>, FAST, 600 V, 9 A, 385 MΩ, TO-220F

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FCPF9N60NTYDTU

FCPF9N60NTYDTU

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS<SUP>®</SUP>, FAST, 600 V, 9 A, 385 MΩ, TO-220F

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Description

General part information

FCPF9N60NT Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationFCPF9N60NTYDTU
Current - Continuous Drain (Id) (Tc)9 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)29 nC
Input Capacitance (Ciss) (Max)1240 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack, Formed Leads
Package NameTO-220F-3 (Y-Forming)
Power Dissipation (Max)29.8 W
Rds On (Max)385 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

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