SCT2H12NZGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 3.7 A, 1.7 KV, 1.15 OHM, TO-3PFM
SCT2H12NZGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 3.7 A, 1.7 KV, 1.15 OHM, TO-3PFM
Description
General part information
SCT2H12NZGC11
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 3.7 A, 1.7 KV, 1.15 OHM, TO-3PFM
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT2H12NZGC11 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3.7 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 14 nC |
| Input Capacitance (Ciss) (Max) | 184 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-3PFM, SC-93-3 |
| Package Name | TO-3PFM |
| Power Dissipation (Max) | 35 W |
| Rds On (Max) | 1.5 Ohm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -6 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4 V |
Pricing
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