Description
General part information
IMBG40R015M2HXTMA1
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMBG40R015M2HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 11.7 A |
| Drain to Source Voltage (Vdss) | 400 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 62 nC |
| Input Capacitance (Ciss) (Max) | 2730 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | PG-TO263-7-11, D2PAK |
| Power Dissipation (Max) | 3.8 W, 341 W |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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CAD
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