Description
General part information
IQDH45N04LM6CGSCATMA1
The power MOSFET IQDH45N04LM6CGSC comes with a low RDS(on)of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IQDH45N04LM6CGSCATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 58 A |
| Current - Continuous Drain (Id) (Tc) | 611 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 78 nC |
| Input Capacitance (Ciss) (Max) | 12000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 9-PowerWDFN |
| Package Name | PG-WHTFN-9-U02 |
| Power Dissipation (Max) | 3 W, 333 W |
| Rds On (Max) | 0.49 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources