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Description

General part information

PJD1NA60A_R2_00001

600V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPJD1NA60A_R2_00001
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)3.1 nC
Input Capacitance (Ciss) (Max)148 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252AA
Rds On (Max)7.9 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

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