DMN2065UWQ-7
ActiveDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
DMN2065UWQ-7
ActiveDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Description
General part information
DMN2065UWQ-7
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2065UWQ-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3.1 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 5.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | SOT-323 |
| Power Dissipation (Max) | 700 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 56 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
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Documents
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