Description
General part information
IPB120P04P4L03ATMA2
MOSFET, AEC-Q101, P-CH, -40V, -120A, 136W ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB120P04P4L03ATMA2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 120 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 234 nC, 234 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 15000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3-2 |
| Power Dissipation (Max) | 136 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 3.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) Negative | -16 V |
| Vgs (Max) Positive | 5 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
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CAD
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Documents
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