Description
General part information
IPD80R1K4CEATMA1
POWER MOSFET, N CHANNEL, 800 V, 3.9 A, 1.2 OHM, TO-252 (DPAK), SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD80R1K4CEATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3.9 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 23 nC |
| Input Capacitance (Ciss) (Max) | 570 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3 |
| Power Dissipation (Max) | 63 W |
| Rds On (Max) | 1.4 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.9 V |
Pricing
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