Description
General part information
IMWH170R450M1XKSA1
The CoolSiC™ MOSFET 1700 V, 450 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power conversion applications. Key features include direct drivability by a fly-back controller, no need for a Gate driver IC, .XT interconnect technology for excellent thermal performance, and a high creepage clearance package for increased reliability.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMWH170R450M1XKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 10 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On) | 12 V |
| Drive Voltage (Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 11.7 nC |
| Input Capacitance (Ciss) (Max) | 506 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-U04 |
| Power Dissipation (Max) | 111 W |
| Rds On (Max) | 390 mOhm |
| Technology | SiCFET (Silicon Carbide), SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | 12 V, 15 V |
| Vgs(th) (Max) | 5.7 V |
Pricing
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