MPS6507 TIN/LEAD
ActiveCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT 20V,50MA,625MW THROUGH-HOLE TRANSISTOR-SMALL SIGNAL (<=1A) NPN RF OSCILLATOR
MPS6507 TIN/LEAD
ActiveCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT 20V,50MA,625MW THROUGH-HOLE TRANSISTOR-SMALL SIGNAL (<=1A) NPN RF OSCILLATOR
Description
General part information
MPS6507 TIN/LEAD
BIPOLAR TRANSISTORS - BJT 20V,50MA,625MW THROUGH-HOLE TRANSISTOR-SMALL SIGNAL (<=1A) NPN RF OSCILLATOR
Technical Specifications
Parameters and characteristics for this part
| Specification | MPS6507 TIN/LEAD |
|---|---|
| Current - Collector (Ic) (Max) | 0.05 mA |
| DC Current Gain (hFE) (Min) | 25 |
| Frequency - Transition | 700 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
Pricing
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