TRS10V65H,LQ
ActiveToshiba Semiconductor and Storage
DIODE SIL CARB 650V 10A 4DFNEP
TRS10V65H,LQ
ActiveToshiba Semiconductor and Storage
DIODE SIL CARB 650V 10A 4DFNEP
Description
General part information
TRS10V65H,LQ
DIODE SIL CARB 650V 10A 4DFNEP
Technical Specifications
Parameters and characteristics for this part
| Specification | TRS10V65H,LQ |
|---|---|
| Capacitance | 649 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 100 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | 4-VSFN Exposed Pad |
| Package Length | 8 mm |
| Package Name | 4-DFN-EP |
| Package Width | 8 mm |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.35 V |
Pricing
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CAD
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Documents
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