Zenode.ai Logo

Description

General part information

TPH3R70APL1,LQ

150V U-MOS IX-H SOP-ADVANCE(N) 3

Technical Specifications

Parameters and characteristics for this part

SpecificationTPH3R70APL1,LQ
Current - Continuous Drain (Id) (Tc)90 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)67 nC
Input Capacitance (Ciss) (Max)6300 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-SOP Advance
Package Width5.75 mm
Power Dissipation (Max)210 W
Rds On (Max)3.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

    TPH3R70APL1,LQ | Toshiba Semiconductor and Storage | Zenode.ai