Description
General part information
IMW65R007M2HXKSA1
The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a TO-247 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMW65R007M2HXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 171 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 179 nC |
| Input Capacitance (Ciss) (Max) | 6359 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-U06 |
| Power Dissipation (Max) | 625 W |
| Rds On (Max) | 6.1 mOhm |
| Technology | SiCFET (Silicon Carbide), SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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