CIGT252010EH1R0MNE
ActiveSamsung Electro-Mechanics
INDUCTOR POWER THIN FILM 1UH 20% 1MHZ METAL COMPOSITE 4.1A 0.03OHM DCR 1008 T/R
CIGT252010EH1R0MNE
ActiveSamsung Electro-Mechanics
INDUCTOR POWER THIN FILM 1UH 20% 1MHZ METAL COMPOSITE 4.1A 0.03OHM DCR 1008 T/R
Description
General part information
CIGT252010EH1R0MNE
INDUCTOR POWER THIN FILM 1UH 20% 1MHZ METAL COMPOSITE 4.1A 0.03OHM DCR 1008 T/R
Technical Specifications
Parameters and characteristics for this part
| Specification | CIGT252010EH1R0MNE |
|---|---|
| Current - Saturation (Isat) | 5 A |
| Current Rating | 4.1 A |
| DC Resistance (DCR) (Max) | 30 mOhm |
| Height - Seated (Max) | 0.039 in |
| Inductance | 1 µH |
| Inductance Frequency - Test | 1 MHz |
| Material - Core | Metal Composite |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 1008 (2520 Metric) |
| Package Length | 2.5 mm |
| Package Name | 1008, 1008 (2520 Metric) |
| Package Width | 2 mm |
| Shielding | Shielded |
| Size / Dimension Length | 0.098 in |
| Size / Dimension Width | 0.079 in |
| Tolerance | 20 % |
| Type | Thin Film |
Pricing
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