TRS4A65F,S1Q
ActiveToshiba Semiconductor and Storage
DIODE SIL CARB 650V 4A TO220F2L
TRS4A65F,S1Q
ActiveToshiba Semiconductor and Storage
DIODE SIL CARB 650V 4A TO220F2L
Description
General part information
TRS4A65F,S1Q
DIODE SIL CARB 650V 4A TO220F2L
Technical Specifications
Parameters and characteristics for this part
| Specification | TRS4A65F,S1Q |
|---|---|
| Capacitance | 16 pF |
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Package / Case | TO-220-2 Full Pack |
| Package Name | TO-220F-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.6 V |
Pricing
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Documents
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