2N7002E-Q1-H
ActiveTaiwan Semiconductor Corporation
60V N-CHANNEL ENHANCEMENT MODE M
2N7002E-Q1-H
ActiveTaiwan Semiconductor Corporation
60V N-CHANNEL ENHANCEMENT MODE M
Description
General part information
2N7002E-Q1-H
60V N-CHANNEL ENHANCEMENT MODE M
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N7002E-Q1-H |
|---|---|
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Rds On (Max) | 2.8 Ohm, 2.8 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
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Documents
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