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DMP4013SPSW-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for PowerDI5060-8

DMP4013SPSW-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

General part information

DMP4013SPSW-13

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP4013SPSW-13
Current - Continuous Drain (Id) (Ta)11 A
Current - Continuous Drain (Id) (Tc)61 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)67 nC
Input Capacitance (Ciss) (Max)4004 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePowerDI5060-8 (Type UX)
Power Dissipation (Max)1.6 W
Rds On (Max)15 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources