Specification	NTMFS4H01NFT1G

Current - Continuous Drain (Id) (Ta)	54 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	82 nC
Input Capacitance (Ciss) (Max)	5538 pF, 5538 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package Leads	5 Leads
Package Length	5 mm
Package Name	8-SOFL, 5-DFN, 8-PowerTDFN
Package Width	6 mm
Power Dissipation (Max)	3.2 W, 125 W
Rds On (Max)	0.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

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