Description
General part information
AIMBG75R033M2HXTMA1
AIMBG75R033M2HXTMA1
Technical Specifications
Parameters and characteristics for this part
| Specification | AIMBG75R033M2HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 50 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 37 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1299 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, PG-TO263-7-12 |
| Power Dissipation (Max) | 189 W |
| Qualification | AEC-Q101 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
Pricing
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