Description
General part information
ISC018N08NM6ATMA1
OptiMOS™ 6 80 V- the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering. Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >24% lower RDS(on)and ~40% improved FOMQg xRDS(on)and FOMQgd xRDS(on)in SuperSO8 The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction. Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC018N08NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 27 A |
| Current - Continuous Drain (Id) (Tc) | 230 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 76 nC, 76 nC |
| Input Capacitance (Ciss) (Max) | 5400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8 FL |
| Power Dissipation (Max) | 217 W, 3 W |
| Rds On (Max) | 1.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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