
RH6R040CHTB1
ActiveRohm Semiconductor
NCH 150V 40A, HSMT8, POWER MOSFE

RH6R040CHTB1
ActiveRohm Semiconductor
NCH 150V 40A, HSMT8, POWER MOSFE
Description
General part information
RH6R040CHTB1
NCH 150V 40A, HSMT8, POWER MOSFE
Technical Specifications
Parameters and characteristics for this part
| Specification | RH6R040CHTB1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 40 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 11.3 nC |
| Input Capacitance (Ciss) (Max) | 700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.2 mm |
| Package Name | 8-HSMT |
| Package Width | 3 mm |
| Power Dissipation (Max) | 2.4 W, 93 W |
| Rds On (Max) | 38 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available