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RH6R040CHTB1

RH6R040CHTB1

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Rohm Semiconductor

NCH 150V 40A, HSMT8, POWER MOSFE

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RH6R040CHTB1

RH6R040CHTB1

Active
Rohm Semiconductor

NCH 150V 40A, HSMT8, POWER MOSFE

Find alt

Description

General part information

RH6R040CHTB1

NCH 150V 40A, HSMT8, POWER MOSFE

Technical Specifications

Parameters and characteristics for this part

SpecificationRH6R040CHTB1
Current - Continuous Drain (Id) (Tc)40 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On)8 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)11.3 nC
Input Capacitance (Ciss) (Max)700 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerVDFN
Package Length3.2 mm
Package Name8-HSMT
Package Width3 mm
Power Dissipation (Max)2.4 W, 93 W
Rds On (Max)38 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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