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DMN4040SK3-13

DMN4040SK3-13

NRND
Diodes Inc

MOSFETS 40V N-CH ENH MODE 30MOHM 10V 13.8A

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DMN4040SK3-13

DMN4040SK3-13

NRND
Diodes Inc

MOSFETS 40V N-CH ENH MODE 30MOHM 10V 13.8A

Find alt

Description

General part information

DMN4040SK3 Series

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN4040SK3-13
Current - Continuous Drain (Id) (Ta)6 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)18.6 nC
Input Capacitance (Ciss) (Max)945 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252-3
Power Dissipation (Max)1.71 W
Rds On (Max)30 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

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