DMN4040SK3-13

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Diodes Inc

TRANS MOSFET N-CH 40V 6A 3-PIN TO-252 T/R

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DMN4040SK3-13

Active

Diodes Inc

TRANS MOSFET N-CH 40V 6A 3-PIN TO-252 T/R

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN4040SK3-13

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.6 nC
Input Capacitance (Ciss) (Max) @ Vds	945 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.71 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMN4040SK3 Series

NRND = Not Recommended for New Design

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)
Diodes Inc DMN4040SK3-13	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	30 mOhm	3 V	1.71 W	Surface Mount	20 V	4.5 V 10 V	18.6 nC	6 A	945 pF	TO-252-3	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.48
		10	$ 0.41
		100	$ 0.29
		500	$ 0.22
		1000	$ 0.18
	Digi-Reel®	1	$ 0.48
		10	$ 0.41
		100	$ 0.29
		500	$ 0.22
		1000	$ 0.18
	Tape & Reel (TR)	2500	$ 0.16
		5000	$ 0.15
		12500	$ 0.14
		25000	$ 0.14

Description

General part information

DMN4040SK3 Series

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.