Description
General part information
BSP299H6327XUSA1
Infineon technologies offers automotive and industrial manufacturers a broad portfolio ofN and P-Channel Small Signal MOSFETsthat meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety ofapplicationsincludingLED lighting,ADAS,body control units,SMPSandmotor control.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSP299H6327XUSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 400 mA |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | PG-SOT223-4 |
| Power Dissipation (Max) | 1.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4 Ohm, 4 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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