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2002A

2002A

Obsolete
Goford Semiconductor

N190V,5A,RD<540M@10V,VTH1.0V~3.0

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2002A

2002A

Obsolete
Goford Semiconductor

N190V,5A,RD<540M@10V,VTH1.0V~3.0

Find alt

Description

General part information

2002A

N190V,5A,RD<540M@10V,VTH1.0V~3.0

Technical Specifications

Parameters and characteristics for this part

Specification2002A
Current - Continuous Drain (Id) (Tc)5 A
Drain to Source Voltage (Vdss)190 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)16 nC
Input Capacitance (Ciss) (Max)733 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-23-6
Package NameSOT-23-6L
Power Dissipation (Max)1.4 W
Rds On (Max)540 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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