Description
General part information
IRS21867STRPBF
The IRS21867STRPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Low VCC operation allows use in battery powered applications. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRS21867STRPBF |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 4 A |
| Current - Peak Output (Source) | 4 A |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 18 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Input Type | CMOS, TTL |
| Logic Voltage - VIH | 2.5 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 22 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
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