NTMTS1D6N10MCTXG
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 100V, 273A, 1.7MΩ, PQFN 8X8
NTMTS1D6N10MCTXG
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 100V, 273A, 1.7MΩ, PQFN 8X8
Description
General part information
NTMTS1D6N10MCTXG
This N-Channel PTNG 100V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMTS1D6N10MCTXG |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 36 A |
| Current - Continuous Drain (Id) (Tc) | 273 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 106 nC |
| Input Capacitance (Ciss) (Max) | 7630 pF, 7630 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 8.3 mm |
| Package Name | 8-DFNW |
| Package Width | 8.4 mm |
| Power Dissipation (Max) | 291 W, 5 W |
| Rds On (Max) | 1.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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