94-3412PBF

Obsolete

Infineon Technologies

MOSFET N-CH 30V 14A 8SO

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 14A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	94-3412PBF

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies 94-3412PBF	8-SOIC	3.9 mm	0.154 in	30 V	12 mOhm	4.5 V	12 V	33 nC	N-Channel	-55 °C	150 °C	1 V	MOSFET (Metal Oxide)	14 A	3.1 W	Surface Mount	8-SO
Infineon Technologies IRF7811APBF	8-SOIC	3.9 mm	0.154 in	28 V	10 mOhm	4.5 V	12 V		N-Channel	-55 °C	150 °C	3 V	MOSFET (Metal Oxide)	11 A	2.5 W	Surface Mount	8-SO	26 nC	1760 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 14A (Ta) 3.1W (Ta) Surface Mount 8-SO

Technical documentation and resources