TK72A08N1,S4X
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 75V 80A TO220SIS
TK72A08N1,S4X
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 75V 80A TO220SIS
Description
General part information
TK72A08N1,S4X
MOSFET N-CH 75V 80A TO220SIS
Technical Specifications
Parameters and characteristics for this part
| Specification | TK72A08N1,S4X |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 80 A |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 175 nC |
| Input Capacitance (Ciss) (Max) | 8200 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) | 4.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
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TK72A08N1 Data sheet/Japanese
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TK72A08N1 Data sheet/English
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Calculating the Temperature of Discrete Semiconductor Devices
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
MOSFET Secondary Breakdown
Maximum Ratings: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET SPICE model grade