SUP70060E-GE3

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Vishay Siliconix

MOSFET N-CH 100V 131A TO220AB

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Vishay Siliconix

MOSFET N-CH 100V 131A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP70060E-GE3

Current - Continuous Drain (Id) @ 25°C	131 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 100V 131A TO220AB

Part	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay Siliconix SUP70060E-GE3	N-Channel	5.8 mOhm	200 W	TO-220AB	10 V	7.5 V	81 nC	100 V	4 V	Through Hole	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	131 A	TO-220-3

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General part information

N-Channel 100 V 131A (Tc) 200W (Tc) Through Hole TO-220AB

Technical documentation and resources