STPSC30G12WL
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 30 A, 149 NC, DO-247LL
Deep-Dive with AI
Search across all available documentation for this part.
STPSC30G12WL
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 30 A, 149 NC, DO-247LL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC30G12WL | STPSC30 Series |
|---|---|---|
| Capacitance @ Vr, F | - | 2272 pF |
| Current - Average Rectified (Io) | - | 30 A |
| Current - Reverse Leakage @ Vr | - | 225 µA |
| Grade | - | Automotive |
| Mounting Type | - | Through Hole |
| null | - | |
| Operating Temperature - Junction | - | 175 ░C |
| Operating Temperature - Junction | - | -55 C |
| Package / Case | - | TO-247-2 |
| Qualification | - | AEC-Q101 |
| Speed | - | 200 - 500 mA |
| Supplier Device Package | - | DO-247 LL |
| Technology | - | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | - | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | - | 1.5 V |
STPSC30 Series
Automotive 1200 V, 30 A Silicon Carbide Diode
| Part | Technology | Supplier Device Package | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Qualification | Voltage - Forward (Vf) (Max) @ If | Grade | Current - Reverse Leakage @ Vr | Speed | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC30G12WLY | SiC (Silicon Carbide) Schottky | DO-247 LL | 2272 pF | 175 ░C | -55 C | AEC-Q101 | 1.5 V | Automotive | 225 µA | 200 mA, 500 ns | TO-247-2 | 1.2 kV | Through Hole | 30 A |
STMicroelectronics STPSC30G12WL |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC30 Series
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.