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DMN62D0UV-13

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Diodes Inc

MOSFETS MOSFET BVDSS: 41V-60V SOT563 T&R 10K

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Package Image for SOT563

DMN62D0UV-13

Active
Diodes Inc

MOSFETS MOSFET BVDSS: 41V-60V SOT563 T&R 10K

Find alt

Description

General part information

DMN62D0UV-13

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN62D0UV-13
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)490 mA
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Max)0.5 nC
Input Capacitance (Ciss) (Max)32 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-563, SOT-666
Package NameSOT-563
Power - Max (Ta)470 mW
Rds On (Max)2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1 V

Pricing

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CAD

3D models and CAD resources for this part