
PJQ2888_R1_00001
ActivePanjit International Inc.
MOSFET 2P-CH 20V 1.5A 8DFN

PJQ2888_R1_00001
ActivePanjit International Inc.
MOSFET 2P-CH 20V 1.5A 8DFN
Description
General part information
PJQ2888_R1_00001
MOSFET 2P-CH 20V 1.5A 8DFN
Technical Specifications
Parameters and characteristics for this part
| Specification | PJQ2888_R1_00001 |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 1.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Max) | 2.2 nC |
| Input Capacitance (Ciss) (Max) | 150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-WFDFN Exposed Pad |
| Package Name | DFN2020-8 |
| Power - Max (Ta) | 1.25 W |
| Rds On (Max) | 325 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
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