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Description

General part information

PJQ2888_R1_00001

MOSFET 2P-CH 20V 1.5A 8DFN

Technical Specifications

Parameters and characteristics for this part

SpecificationPJQ2888_R1_00001
Channel Count2
ConfigurationP-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)1.5 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Max)2.2 nC
Input Capacitance (Ciss) (Max)150 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-WFDFN Exposed Pad
Package NameDFN2020-8
Power - Max (Ta)1.25 W
Rds On (Max)325 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1 V

Pricing

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