JANS1N6310/TR
ActiveMicrochip Technology
DIODE ZENER 2.7V 500MW B-AXIAL
JANS1N6310/TR
ActiveMicrochip Technology
DIODE ZENER 2.7V 500MW B-AXIAL
Description
General part information
JANS1N6310/TR
DIODE ZENER 2.7V 500MW B-AXIAL
Technical Specifications
Parameters and characteristics for this part
| Specification | JANS1N6310/TR |
|---|---|
| Current - Reverse Leakage | 60 µA |
| Grade | Military |
| Impedance (Max) (Zzt) | 30 Ohms |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | B, Axial |
| Package Name | Axial, B |
| Power - Max | 0.5 W |
| Qualification | MIL-PRF-19500, 533 |
| Tolerance | 5 % |
| Voltage - Forward (Vf) (Max) | 1.4 V |
| Voltage - Zener (Nom) (Vz) | 2.7 V |
Pricing
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CAD
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