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IPB049NE7N3GATMA1

IPB049NE7N3GATMA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 75 V ; D2PAK TO-263 PACKAGE; 4.9 MOHM;

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IPB049NE7N3GATMA1

IPB049NE7N3GATMA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 75 V ; D2PAK TO-263 PACKAGE; 4.9 MOHM;

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Description

General part information

IPB049NE7N3GATMA1

The 75V OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB049NE7N3GATMA1
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)68 nC
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NamePG-TO263-3
Power Dissipation (Max)150 W
Rds On (Max)4.9 mOhm, 4.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.8 V

Pricing

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CAD

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Documents

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