
MTB10N40ET4
ActiveON Semiconductor
N-CHANNEL POWER MOSFET

MTB10N40ET4
ActiveON Semiconductor
N-CHANNEL POWER MOSFET
Description
General part information
MTB10N40ET4
N-CHANNEL POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | MTB10N40ET4 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10 A |
| Drain to Source Voltage (Vdss) | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 63 nC |
| Input Capacitance (Ciss) (Max) | 2200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | D2PAK |
| Power Dissipation (Max) | 125 W, 2.5 W |
| Rds On (Max) | 550 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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