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NVMFS5C670NLET1G-YE

NVMFS5C670NLET1G-YE

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ON Semiconductor

TRENCH 6 60V NFET

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NVMFS5C670NLET1G-YE

NVMFS5C670NLET1G-YE

Active
ON Semiconductor

TRENCH 6 60V NFET

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Description

General part information

NVMFS5C670NLET1G-YE

TRENCH 6 60V NFET

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFS5C670NLET1G-YE
Current - Continuous Drain (Id) (Ta)17 A
Current - Continuous Drain (Id) (Tc)71 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1400 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads5 Leads
Package Length5 mm
Package Name8-SOFL, 5-DFN, 8-PowerTDFN
Package Width6 mm
Power Dissipation (Max)61 W, 3.6 W
QualificationAEC-Q101
Rds On (Max)6.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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