Specification	R6530KNZC8

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	56 nC
Input Capacitance (Ciss) (Max)	2350 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Package Name	TO-3PF
Power Dissipation (Max)	86 W
Rds On (Max)	140 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	5 V

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