Specification	AMB410N

Current - Continuous Drain (Id) (Ta)	2.2 A
Current - Continuous Drain (Id) (Tc)	5.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	5 nC
Input Capacitance (Ciss) (Max)	509 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-PowerUFDFN
Package Length	1.6 mm
Package Name	6-DFN
Package Width	1.6 mm
Power Dissipation (Max)	9.9 W, 1.8 W
Rds On (Max)	250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1 V

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