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W66BP2NQQAHJ

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Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200TFBGA

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W66BP2NQQAHJ

Active
Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200TFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationW66BP2NQQAHJW66BP2 Series
Access Time3.6 ns3.6 ns
Clock Frequency2.133 GHz1.6 - 2.133 GHz
Memory FormatDRAMDRAM
Memory Organization64M x 3264M x 32
Memory Size2 Gbit2 Gbit
Memory TypeVolatileVolatile
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]105 °C105 °C
Operating Temperature [Min]-40 °C-40 °C
Package / Case200-TFBGA200-TFBGA
Supplier Device Package200-TFBGA200-TFBGA
Supplier Device Package [x]1010
Supplier Device Package [y]14.514.5
TechnologySDRAM - Mobile LPDDR4SDRAM - Mobile LPDDR4
Voltage - Supply [Max]1.95 V, 1.17 V1.17 - 1.95 V
Voltage - Supply [Min]1.06 V, 1.7 V1.06 - 1.7 V
Write Cycle Time - Word, Page18 ns18 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 144$ 4.30

W66BP2 Series

IC DRAM 2GBIT LVSTL 11 200TFBGA

PartMounting TypeWrite Cycle Time - Word, PageOperating Temperature [Max]Operating Temperature [Min]Memory OrganizationPackage / CaseVoltage - Supply [Min]Voltage - Supply [Max]Clock FrequencyMemory FormatMemory SizeMemory TypeTechnologySupplier Device Package [y]Supplier Device Package [x]Supplier Device PackageAccess Time
Winbond Electronics
W66BP2NQQAHJ
Surface Mount
18 ns
105 °C
-40 °C
64M x 32
200-TFBGA
1.06 V, 1.7 V
1.17 V, 1.95 V
2.133 GHz
DRAM
2 Gbit
Volatile
SDRAM - Mobile LPDDR4
14.5
10
200-TFBGA
3.6 ns
Winbond Electronics
W66BP2NQUAFJ
Surface Mount
18 ns
105 °C
-40 °C
64M x 32
200-TFBGA
1.06 V, 1.7 V
1.17 V, 1.95 V
1.6 GHz
DRAM
2 Gbit
Volatile
SDRAM - Mobile LPDDR4
14.5
10
200-TFBGA
3.6 ns

Description

General part information

W66BP2 Series

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL_11 2.133 GHz 3.6 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available