IPA60R125P6XKSA1

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INFINEON

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V

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IPA60R125P6XKSA1

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INFINEON

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V

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Description Specifications Series Pricing CAD Documents

Description

General part information

IPA60R Series

InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Technical Specifications

Parameters and characteristics for this part

Specification	IPA60R125P6XKSA1

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	56 nC
Input Capacitance (Ciss) (Max)	2660 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	PG-TO220-FP
Power Dissipation (Max)	34 W
Rds On (Max)	125 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPA60R Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package Name	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Technology	Gate Charge (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Vgs(th) (Max)
INFINEON IPA60R600CPXKSA1	10 V	Through Hole	PG-TO220-3-31	600 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	27 nC	28 W	6.1 A	N-Channel	600 mOhm	550 pF	TO-220-3 Full Pack	3.5 V
INFINEON IPA60R125C6E8191XKSA1
INFINEON IPA60R170CFD7XKSA1	10 V	Through Hole	PG-TO220-FP	650 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	28 nC	26 W	8 A	N-Channel	170 mOhm	1199 pF	TO-220-3 Full Pack	4.5 V
INFINEON IPA60R160P6XKSA1	10 V	Through Hole	PG-TO220-FP	600 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	44 nC 44 nC	34 W	23.8 A	N-Channel	160 mOhm	2080 pF	TO-220-3 Full Pack	4.5 V
INFINEON IPA60R190C6XKSA1	10 V	Through Hole	PG-TO220-FP	600 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	63 nC	34 W	20.2 A 20.2 A	N-Channel	190 mOhm	1400 pF	TO-220-3 Full Pack	3.5 V
INFINEON IPA60R120C7XKSA1	10 V	Through Hole	PG-TO220-FP	600 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	34 nC	32 W	11 A	N-Channel	120 mOhm	1500 pF	TO-220-3 Full Pack	4 V
INFINEON IPA60R125CPXKSA1	10 V	Through Hole	PG-TO220-FP	650 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	70 nC	35 W	25 A 25 A	N-Channel	125 mOhm	2500 pF	TO-220-3 Full Pack	3.5 V
INFINEON IPA60R120P7XKSA1	10 V	Through Hole	PG-TO220 Full Pack	600 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	36 nC 36 nC	28 W	26 A	N-Channel	0.12 Ohm	1544 pF	TO-220-3 Full Pack	4 V
INFINEON IPA60R450E6XKSA1	10 V	Through Hole	PG-TO220-FP	600 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	28 nC	30 W	9.2 A	N-Channel	0.45 Ohm	620 pF	TO-220-3 Full Pack	3.5 V
INFINEON IPA60R330P6XKSA1	10 V	Through Hole	PG-TO220-FP	600 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	22 nC	32 W	12 A	N-Channel	330 mOhm	1010 pF	TO-220-3 Full Pack	4.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IPA60R125P6XKSA1 | Datasheet