2N6027 TIN/LEAD
ActiveCentral Semiconductor Corp
40V 150MA TH PROGRAMMABLE UJT
2N6027 TIN/LEAD
ActiveCentral Semiconductor Corp
40V 150MA TH PROGRAMMABLE UJT
Description
General part information
2N6027 TIN/LEAD
40V 150MA TH PROGRAMMABLE UJT
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6027 TIN/LEAD |
|---|---|
| Current - Gate to Anode Leakage (Igao) | 10 nA |
| Current - Peak | 2 µA |
| Current - Valley (Iv) | 50 µA |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Power Dissipation (Max) | 300 mW |
| Voltage | 40 V |
| Voltage - Offset (Vt) | 1.6 V |
| Voltage - Output | 6 V |
Pricing
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