Specification	IRFB9N65APBF-BE3

Current - Continuous Drain (Id) (Tc)	8.5 A
Drain to Source Voltage (Vdss)	650 V
FET Type	N-Channel
Gate Charge (Max)	48 nC, 48 nC
Input Capacitance (Ciss) (Max)	1417 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	167 W
Rds On (Max)	930 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

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