Specification	TPC8A05-H(TE12L,QM

Current - Continuous Drain (Id) (Ta)	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	1700 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package Length	0.173 in, 5.5 mm
Package Name	8-SOIC, 8-SOP
Package Width	4.4 mm, 6 mm
Power Dissipation (Max)	1 W
Rds On (Max)	13.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.3 V

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