Description
General part information
IPTC014N08NM5ATMA1
IPTC014N08NM5 is part ofOptiMOS™ 5 power MOSFET in TOLT: the TO-Leaded top side-cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS™ 5 technology allows best-in-class products in 80 V as well as high current rating >300 A for high power density designs. With top side-cooling setup the drain is exposed at the surface of the package and 95 percent of the heat dissipation can be promoted directly to the heatsink achieving 20 percent better RthJAand 50 percent improved RthJCcompared to TOLL package. With bottom side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses. OptiMOS™ 5 power MOSFET in TOLT targetspower tools,light electric vehiclesandbattery management systems.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPTC014N08NM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 37 A |
| Current - Continuous Drain (Id) (Tc) | 330 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 180 nC |
| Input Capacitance (Ciss) (Max) | 13000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 16-PowerSOP Module |
| Package Name | PG-HDSOP-16-2 |
| Power Dissipation (Max) | 300 W, 3.8 W |
| Rds On (Max) | 1.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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