TK099U60Z1,RQ
ActiveToshiba Semiconductor and Storage
N-CH MOSFET, 600 V, 0.099 @10V,
TK099U60Z1,RQ
ActiveToshiba Semiconductor and Storage
N-CH MOSFET, 600 V, 0.099 @10V,
Description
General part information
TK099U60Z1,RQ
N-CH MOSFET, 600 V, 0.099 @10V,
Technical Specifications
Parameters and characteristics for this part
| Specification | TK099U60Z1,RQ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 25 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 36 nC, 36 nC |
| Input Capacitance (Ciss) (Max) | 2050 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerSFN |
| Package Name | Toll |
| Power Dissipation (Max) | 176 W |
| Rds On (Max) | 99 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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