DMTH10H009LPS-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH10H009LPS-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH10H009LPS-13
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH10H009LPS-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 14 A |
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 40.2 nC |
| Input Capacitance (Ciss) (Max) | 2309 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 |
| Power Dissipation (Max) | 1.5 W, 125 W |
| Rds On (Max) | 8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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