
SCS215AEC
ObsoleteRohm Semiconductor
DIODE SIL CARBIDE 650V 15A TO247

SCS215AEC
ObsoleteRohm Semiconductor
DIODE SIL CARBIDE 650V 15A TO247
Description
General part information
SCS215AEC
DIODE SIL CARBIDE 650V 15A TO247
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS215AEC |
|---|---|
| Capacitance | 550 pF |
| Current - Average Rectified (Io) | 15 A |
| Current - Reverse Leakage | 300 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.55 V |
Pricing
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CAD
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Documents
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