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SIR5406DP-T1-UE3

SIR5406DP-T1-UE3

Active
Vishay Dale

N-CHANNEL 40-V (D-S) MOSFET

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SIR5406DP-T1-UE3

SIR5406DP-T1-UE3

Active
Vishay Dale

N-CHANNEL 40-V (D-S) MOSFET

Find alt

Description

General part information

SIR5406DP-T1-UE3

N-CHANNEL 40-V (D-S) MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR5406DP-T1-UE3
Current - Continuous Drain (Id) (Ta)33.3 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)7.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)66 nC, 66 nC
Input Capacitance (Ciss) (Max)2675 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8
Package NamePowerPAK® SO-8
Power Dissipation (Max)5 W, 71.4 W
Rds On (Max)2.5 mOhm, 2.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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