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Description

General part information

AON2701

MOSFET P-CH 20V 3A 6DFN

Technical Specifications

Parameters and characteristics for this part

SpecificationAON2701
Current - Continuous Drain (Id) (Ta)3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Max)6.5 nC
Input Capacitance (Ciss) (Max)700 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-WDFN Exposed Pad
Package Length2 mm
Package Name6-DFN
Package Width2 mm
Power Dissipation (Max)1.5 W
Rds On (Max)120 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1 V

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CAD

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